Features: • 3.3V power supply • LVTTL compatible with multiplexed address• Four banks operation • MRS cycle with address key programs -. CAS latency ( 2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)•All inputs are sa...
K4S643232E-N: Features: • 3.3V power supply • LVTTL compatible with multiplexed address• Four banks operation • MRS cycle with address key programs -. CAS latency ( 2 & 3) -. Burst len...
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Features: • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed addre...
Features: • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed addre...
Features: • JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed addres...
Parameter |
Symbol |
Value |
Unit |
Voltage on any pin relative to Vss |
VIN, VOUT |
-1.0 ~ 4.6 |
V |
Voltage on VDD supply relative to Vss |
VDD, VDDQ |
-1.0 ~ 4.6 |
V |
Storage temperature |
TSTG |
-55 ~ +150 |
°C |
Power dissipation |
PD |
1 |
W |
Short circuit current |
IOS |
50 |
mA |
The K4S643232E-N is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG¢s high performance CMOS technology. Synchronous design of K4S643232E-N allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.