Features: •JEDEC standard 3.3V power supply •LVTTL compatible with multiplexed address•Four banks operation •MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)•All inp...
K4S641632D: Features: •JEDEC standard 3.3V power supply •LVTTL compatible with multiplexed address•Four banks operation •MRS cycle with address key programs -. CAS latency (2 & 3) -....
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Features: • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed addre...
Features: • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed addre...
Features: • JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed addres...
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to VSS | VIN, VOUT | -1.0 ~ 4.6 | V |
Voltage on VDD & VDDQ supply relative to VSS | VDD, VDDQ | -1.0 ~ 4.6 | V |
Storage temperature | TSTG | -55 ~ +150 | |
Power dissipation | PD | 1 | W |
Short circuit current | IOS | 50 | mA |
The K4S641632D is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programma- ble burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high perfor-mance memory system applications.