K4S641632D

Features: •JEDEC standard 3.3V power supply •LVTTL compatible with multiplexed address•Four banks operation •MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)•All inp...

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K4S641632D Picture
SeekIC No. : 004383011 Detail

K4S641632D: Features: •JEDEC standard 3.3V power supply •LVTTL compatible with multiplexed address•Four banks operation •MRS cycle with address key programs -. CAS latency (2 & 3) -....

floor Price/Ceiling Price

Part Number:
K4S641632D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

•JEDEC standard 3.3V power supply
•LVTTL compatible with multiplexed address
•Four banks operation
•MRS cycle with address key programs
     -. CAS latency (2 & 3)
     -. Burst length (1, 2, 4, 8 & Full page)
     -. Burst type (Sequential & Interleave)
•All inputs are sampled at the positive going edge of the system clock
•Burst read single-bit write operation
•DQM for masking
•Auto & self refresh
•64ms refresh period (4K cycle)



Pinout

  Connection Diagram


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to VSS VIN, VOUT -1.0 ~ 4.6 V
Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -1.0 ~ 4.6 V
Storage temperature TSTG -55 ~ +150
Power dissipation PD 1 W
Short circuit current IOS 50 mA



Description

  The K4S641632D is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programma- ble burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high perfor-mance memory system applications.




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