K4S640832D

Features: • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address• Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)• Al...

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K4S640832D Picture
SeekIC No. : 004383006 Detail

K4S640832D: Features: • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address• Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3...

floor Price/Ceiling Price

Part Number:
K4S640832D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Description



Features:

•  JEDEC standard 3.3V power supply
•  LVTTL compatible with multiplexed address
•  Four banks operation
•  MRS cycle with address key programs
     -. CAS latency (2 & 3)
     -. Burst length (1, 2, 4, 8 & Full page)
     -. Burst type (Sequential & Interleave)
•  All inputs are sampled at the positive going edge of the system  clock
•  Burst read single-bit write operation
•  DQM for masking
•  Auto & self refresh
•  64ms refresh period (4K Cycle)



Pinout

  Connection Diagram


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to VSS VIN, VOUT -1.0 ~ 4.6 V
Voltage on VDD & VDDQ supply relative to VSS VDD, VDDQ -1.0 ~ 4.6 V
Storage temperature TSTG -55 ~ +150
Power dissipation PD 1 W
Short circuit current IOS 50 mA



Description

  The K4S640832D is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst
length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance mem-ory system applications.




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