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K4S56323PF-F(H)G/F90

Features: • 1.8V power supply.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).• EMRS cyc...

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SeekIC No. : 004383000 Detail

K4S56323PF-F(H)G/F90: Features: • 1.8V power supply.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Bur...

K4S56323PF-F(H)G/F90 Data Sheet

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Part Number:
K4S56323PF-F(H)G/F90
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 1.8V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
   -. CAS latency (1, 2 & 3).
   -. Burst length (1, 2, 4, 8 & Full page).
   -. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
   -. PASR (Partial Array Self Refresh).
   -. Internal TCSR (Temperature Compensated Self Refresh)
   -. DS (Driver Strength)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (4K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• Extended Temperature Operation (-25°C ~ 85°C).
• 90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 2.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 2.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.0
W
Short circuit current
IOS
50
mA
NOTES:
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.


Description

The K4S56323PF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology.Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.




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