K4S561633F-ZL75

The K4S561633F-ZL75 is designed as a 268,435,456 bits synchronous high data rate dynamic RAM which is organized as 4x4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

The K4S561633F-ZL75 has eleven features. (1)3.0V & 3.3V power supply. (2)LVCMOS compatible with multiplexed address. (3)Four banks operation. (4)MRS cycle with address key programs. (5)EMRS cycle with address key programs. (6)All inputs are sampled at the positive going edge of the system clock. (7)Burst read single-bit write operation. (8)Special function support. (9)DQM for masking. (10)Auto refresh. (11)64ms refresh period (8K cycle). Those are all the main features.

Some absolute maximum ratings of K4S561633F-ZL75 have been concluded into several points as follow. (1)Its voltage on any pin relative to Vss would be from -1V to 4.6V. (2)Its voltage on Vdd supply relative to Vss would be from -1.0V to 4.6V. (3)Its storage temperature range would be from -55°C to 150°C. (4)Its power dissipation would e 1.0W. (5)Its short circuit current would be 50mA. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of K4S561633F-ZL75 are concluded as follow. (1)Its supply voltage would be min 2.7V and typ 3.0V and max 3.6V. (2)Its input logic high voltage would be min 2.2V and typ 3.0V and max Vddq+0.3V. (3)Its input logic low voltage would be min -0.3V and typ 0V and max 0.5V. (4)Its output logic high voltage would be min 2.4V. (5)Its output logic low voltage would be max 0.4V. (6)Its input leakage current would be min -10uA and max 10uA. If you have any question or suggestion or want to know more information please contact us for details. Thank you!