K4S561633F-ZE

•  3.0V & 3.3V power supply.
•  LVCMOS compatible with multiplexed address.
•  Four banks operation.
•  MRS cycle with address key programs.
        -. CAS latency (1, 2 & 3).
        -. Burst length (1, 2, 4, 8 & Full page).
        -. Burst type (Sequential & Interleave).
•  EMRS cycle with address key programs.
•  All inputs are sampled at the positive going edge of  the system clock
•  Burst read single-bit write operation.
•  Special Function Support.
        -. PASR (Partial Array Self Refresh).
        -. Internal TCSR (Temperature Compensated Self Refresh)
•  DQM for masking.
•  Auto refresh.
•  64ms refresh period (8K cycle).
•  Commercial Temperature Operation (-25°C ~ 70°C).
•  Extended Temperature Operation (-25°C ~ 85°C).
•  54Balls BOC with 0.8mm ball pitch                                                     
        ( -X : Leaded,  -Z : Lead Free).

The K4S561633F-ZE is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,fabricated with SAMSUNGs high performance CMOS technology. Synchronous design of K4S561633F-ZE allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.