Features: • 3.0V & 3.3V power supply.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave)....
K4S561633D: Features: • 3.0V & 3.3V power supply.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs. -. CAS latency (1 & 2 ...
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Features: • JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed addres...
Features: • JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed addres...
Features: • JEDEC standard 3.3V power supply• LVTTL compatible with multiplexed addres...
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to Vss | VIN, VOUT | -1.0 ~ 4.6 | V |
Voltage on VDD supply relative to Vss | VDD, VDDQ | -1.0 ~ 4.6 | V |
Storage temperature | TSTG | -55 ~ +150 | °C |
Power dissipation | PD | 1 | W |
Short circuit current | IOS | 50 | mA |
The K4S561633D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633D allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.