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K4S561633C-BL

Features: • 3.0V & 3.3V power supply.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs. -. CAS latency (1 & 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave)...

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SeekIC No. : 004382966 Detail

K4S561633C-BL: Features: • 3.0V & 3.3V power supply.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs. -. CAS latency (1 & 2...

K4S561633C-BL Data Sheet

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Part Number:
K4S561633C-BL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

•   3.0V & 3.3V power supply.
•   LVCMOS compatible with multiplexed address.
•   Four banks operation.
•   MRS cycle with address key programs.
           -. CAS latency (1 & 2 & 3).
           -. Burst length (1, 2, 4, 8 & Full page).
           -. Burst type (Sequential & Interleave).
•   All inputs are sampled at the positive going edge of the system clock.
•   Burst read single-bit write operation.
•   DQM for masking
•   Auto refresh.
•   64ms refresh period (8K cycle).
•   Commercial Temperature Operation (-25 °C ~ 70°C).
     Extended Temperature Operation ( -25 °C ~ 85°C).
     Inderstrial Temperature Operation ( -40°C ~ 85°C).
•   54balls CSP  (-RXXX - Pb, -BXXX - Pb Free)


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1
W
Short circuit current
IOS
50
mA



Description

The K4S561633C-BL is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design of K4S561633C-BL allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.




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