K4S560832C-TC

The K4S560832C-TC is designed as one kind of 268,435,456 bits synchronous high data rate Dynamic RAM that is organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features of the K4S560832C-TC are:(1)JEDEC standard 3.3V power supply; (2)LVTTL compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs: CAS latency (2 & 3) and Burst length (1, 2, 4, 8 & Full page) and Burst type (Sequential & Interleave); (5)All inputs are sampled at the positive going edge of the system clock; (6)Burst read single-bit write operation; (7)DQM for masking; (8)Auto & self refresh; (9)64ms refresh period (8K Cycle).

The absolute maximum ratings of the K4S560832C-TC can be summarized as:(1)Voltage on any pin relative to Vss: -1.0 to 4.6 V;(2)Voltage on VDD supply relative to Vss: -1.0 to 4.6 V;(3)Storage temperature: -55 to +150 °C;(4)Power dissipation: 1 W;(5)Short circuit current:50 mA. If you want to know more information such as the electrical characteristics about the K4S560832C-TC, please download the datasheet in www.seekic.com or www.chinaicmart.com.