K4S560432E

    The K4S560432E / K4S560832E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4x16,777,216 words by 4bits / 4 x 8,388,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be  useful for a variety of high bandwidth, high performance memory system applications.