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K4S51323LF-L

Features: • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave)....

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SeekIC No. : 004382933 Detail

K4S51323LF-L: Features: • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.• LVCMOS compatible with multiplexed address.• Four banks operation.• MRS cycle with address key programs. -. CAS latency (1, 2 ...

K4S51323LF-L Data Sheet

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Part Number:
K4S51323LF-L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

•  VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.
•  LVCMOS compatible with multiplexed address.
•  Four banks operation.
•  MRS cycle with address key programs.
        -. CAS latency (1, 2 & 3).
        -. Burst length (1, 2, 4, 8 & Full page).
        -. Burst type (Sequential & Interleave).
•  EMRS cycle with address key programs.
•  All inputs are sampled at the positive going edge of the system clock.
•  Burst read single-bit write operation.
•  Special Function Support.
       -. PASR (Partial Array Self Refresh).
       -. Internal TCSR (Temperature Compensated Self Refresh)
•  DQM for masking.
•  Auto refresh.
•  64ms refresh period (8K cycle).
•  Commercial Temperature Operation (-25°C ~ 70°C).
•  2Chips DDP 90Balls FBGA ( -MXXX  -Pb,   -EXXX -Pb Free).


Specifications

Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1
W
Short circuit current
IOS
50
mA



Description

The K4S51323LF-L is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.




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