Position: Home  > All Categories> Integrated Circuits (ICs) > K4E661611D

K4E661611D

Features: • Part Identification- K4E661611D-TC(5.0V, 8K Ref.)- K4E641611D-TC(5.0V, 4K Ref.)• Extended Data Out Mode operation• 2CAS Byte/Word Read/Write operation• CAS-before-RAS refresh capability• RAS-only and Hidden refresh capability• Fast parallel test mode...

product image

K4E661611D Picture
See larger image
SeekIC No. : 004382727 Detail

K4E661611D: Features: • Part Identification- K4E661611D-TC(5.0V, 8K Ref.)- K4E641611D-TC(5.0V, 4K Ref.)• Extended Data Out Mode operation• 2CAS Byte/Word Read/Write operation• CAS-before...

K4E661611D Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
K4E661611D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Part Identification
- K4E661611D-TC(5.0V, 8K Ref.)
- K4E641611D-TC(5.0V, 4K Ref.)
• Extended Data Out Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• TTL(5.0V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) package
• +5.0V±10% power supply


Pinout

Connection Diagram


Specifications

Parameter Symbol Rating Units
Voltage on any pin relative to VSS VIN,VOUT -0.5 to +4.6 V
Voltage on VCC supply relative to VSS VCC -0.5 to +4.6 V
Storage Temperature Tstg -55 to +150 °C
Power Dissipation PD 1 W
Short Circuit Output Current IOS Address 50 mA

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.




Description

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs K4E661611D. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-50 or -60) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO Mode DRAM K4E661611D family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Optoelectronics
SFH7770
TLP423J
Transformers
TM-09210
BV222-1-00992
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Test Equipment
TOP853
TOP2005
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
View more