Position: Home  > All Categories> Integrated Circuits (ICs) > K4E660812E

K4E660812E

Features: • Part Identification- K4E660812E-JC/L(3.3V, 8K Ref.)- K4E640812E-JC/L(3.3V, 4K Ref.)- K4E660812E-TC/L(3.3V, 8K Ref.)- K4E640812E-TC/L(3.3V, 4K Ref.)• Extended Data Out Mode operation• CAS-before-RAS refresh capability•RAS-only and Hidden refresh capability•...

product image

K4E660812E Picture
See larger image
SeekIC No. : 004382726 Detail

K4E660812E: Features: • Part Identification- K4E660812E-JC/L(3.3V, 8K Ref.)- K4E640812E-JC/L(3.3V, 4K Ref.)- K4E660812E-TC/L(3.3V, 8K Ref.)- K4E640812E-TC/L(3.3V, 4K Ref.)• Extended Data Out Mode op...

K4E660812E Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
K4E660812E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Part Identification
- K4E660812E-JC/L(3.3V, 8K Ref.)
- K4E640812E-JC/L(3.3V, 4K Ref.)
- K4E660812E-TC/L(3.3V, 8K Ref.)
- K4E640812E-TC/L(3.3V, 4K Ref.)
• Extended Data Out Mode operation
• CAS-before-RAS refresh capability
•RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• Fast parallel test mode capability
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• +3.3V ±0.3V power supply


Pinout

Connection Diagram


Specifications

Parameter Symbol Rating Units
Voltage on any pin relative to VSS VIN,VOUT -0.5 to +4.6 V
Voltage on VCC supply relative to VSS VCC -0.5 to +4.6 V
Storage Temperature Tstg -55 to +150 °C
Power Dissipation PD 1 W
Short Circuit Output Current IOS Address 50 mA

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.




Description

This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs K4E660812E. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 8Mx8 EDO Mode DRAM family K4E660812E is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Optoelectronics
SFH7770
TLP423J
Filters
PICO2205A
PICO2204A
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Circuit Protection
A50QS75-4Y
F-17*77
Tapes, Adhesives
803
AC452-2
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
View more