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K4E641612B

Features: • Part Identification- K4E661612B-TC/L(3.3V, 8K Ref., TSOP)- K4E641612B-TC/L(3.3V, 4K Ref., TSOP)• Extended Data Out Mode operation• 2CAS Byte/Word Read/Write operation• CAS-before-RAS refresh capability• RAS-only and Hidden refresh capability• Fast pa...

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SeekIC No. : 004382719 Detail

K4E641612B: Features: • Part Identification- K4E661612B-TC/L(3.3V, 8K Ref., TSOP)- K4E641612B-TC/L(3.3V, 4K Ref., TSOP)• Extended Data Out Mode operation• 2CAS Byte/Word Read/Write operation&#...

K4E641612B Data Sheet

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Part Number:
K4E641612B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Part Identification
- K4E661612B-TC/L(3.3V, 8K Ref., TSOP)
- K4E641612B-TC/L(3.3V, 4K Ref., TSOP)
• Extended Data Out Mode operation
• 2 CAS Byte/Word Read/Write operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• Self-refresh capability (L-ver only)
• LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic TSOP(II) packages
• +3.3V±0.3V power supply


Pinout

Connection Diagram


Specifications

Parameter Symbol Rating Units
Voltage on any pin relative to VSS VIN,VOUT -0.5 to +4.6 V
Voltage on VCC supply relative to VSS VCC -0.5 to +4.6 V
Storage Temperature Tstg -55 to +150 °C
Power Dissipation PD 1 W
Short Circuit Output Current IOS Address 50 mA

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.




Description

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs K4E641612B . Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM K4E641612B family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.




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