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K4D263238F

Features: • 2.5V ± 5% power supply for device operation• 2.5V ± 5% power supply for I/O interface• SSTL_2 compatible inputs/outputs• 4 banks operation• MRS cycle with address key programs-. Read latency 3 (clock)-. Burst length (2, 4, 8 and Full page)-. Burst type (se...

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SeekIC No. : 004382685 Detail

K4D263238F: Features: • 2.5V ± 5% power supply for device operation• 2.5V ± 5% power supply for I/O interface• SSTL_2 compatible inputs/outputs• 4 banks operation• MRS cycle with a...

K4D263238F Data Sheet

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Part Number:
K4D263238F
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• 2.5V ± 5% power supply for device operation
• 2.5V ± 5% power supply for I/O interface
• SSTL_2 compatible inputs/outputs
• 4 banks operation
• MRS cycle with address key programs
-. Read latency 3 (clock)
-. Burst length (2, 4, 8 and Full page)
-. Burst type (sequential & interleave)
• Full page burst length for sequential burst type only
• Start address of the full page burst should be even
• All inputs except data & DM are sampled at the positive going edge of the system clock
• Differential clock input
• No Write Interrupted by Read function
• Data I/O transactions on both edges of Data strobe
• DLL aligns DQ and DQS transitions with Clock transition
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• DM for write masking only
• Auto & Self refresh
• 32ms refresh period (4K cycle)
• 100pin TQFP package
• Maximum clock frequency up to 250MHz
• Maximum data rate up to 500Mbps/pin


Pinout

Connection Diagram


Specifications

Parameter Symbol Value Unit
Voltage on any pin relative to Vss VIN, VOUT -0.5 ~ 3.6 V
Voltage on VDD supply relative to Vss VDD -1.0 ~ 3.6 V
Voltage on VDDQ supply relative to Vss VDDQ -0.5 ~ 3.6 V
Storage temperature TSTG -55 ~ +150 °C
Power dissipation PD 1.8 W
Short circuit current IOS 50 mA

Note :Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.Functional operation should be restricted to recommended operating condition.Exposure to higher than recommended voltage for extended periods of time could affect device reliability.




Description

The K4D263238F is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.0GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.




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