Features: • 2.5V + 5% power supply for device operation• 2.5V + 5% power supply for I/O interface• SSTL_2 compatible inputs/outputs• 4 banks operation• MRS cycle with address key programs-. Read latency 3, 4 (clock)-. Burst length (2, 4 and 8)-. Burst type (sequential...
K4D261638E: Features: • 2.5V + 5% power supply for device operation• 2.5V + 5% power supply for I/O interface• SSTL_2 compatible inputs/outputs• 4 banks operation• MRS cycle with a...
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Features: • 2.5V + 5% power supply for device operation• 2.5V + 5% power supply for I/...
Features: • 2.5V + 5% power supply for device operation• 2.5V + 5% power supply for I/...
PinoutDescriptionThe K4D263238A-GC33 is a kind of 134,217,728 bits of hyper synchronous data rate ...
Symbol | Symbol | Value | Unit |
Voltage on any pin relative to Vss | VIN, VOUT | -0.5 ~ 3.6 | V |
Voltage on VDD supply relative to Vss | VDD | -1.0 ~ 3.6 | V |
Voltage on VDD supply relative to Vss | VDDQ | -0.5 ~ 3.6 | V |
Storage temperature | TSTG | -55 ~ +150 | °C |
Power dissipation | PD | 2.0 | W |
Short circuit current | IOS | 50 | mA |
The K4D261638E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 1.4GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.