K4D263238E-GC33

The K4D263238E-GC33 is designed as one kind of 134,217,728 bits of hyper synchronous data rate Dynamic RAM device that is organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG's high performance CMOS technology.

Features of the K4D263238E-GC33 are:(1)Full page burst length for sequential burst type only; (2)Start address of the full page burst should be even; (3)All inputs except data & DM are sampled at the positive going edge of the system clock; (4)Differential clock input; (5)VDD/VDDQ = 2.8V ?5% for -GC25; (6)VDD/VDDQ = 2.5V ?5% for -GC2A/33/36/40/45; (7)SSTL_2 compatible inputs/outputs; (8)4 banks operation; (9)No Wrtie-Interrupted by Read Function; (10)4 DQS's ( 1DQS / Byte ); (11)Data I/O transactions on both edges of Data strobe; (12)DLL aligns DQ and DQS transitions with Clock transition; (13)Edge aligned data & data strobe output; (14)Center aligned data & data strobe input; (15)DM for write masking only; (16)Auto & Self refresh; (17)32ms refresh period (4K cycle); (18)144-Ball FBGA; (19)Maximum clock frequency up to 400MHz; (20)Maximum data rate up to 800Mbps/pin.

The absolute maximum ratings of the K4D263238E-GC33 can be summarized as:(1)Voltage on any pin relative to Vss: -0.5 to 3.6 V;(2)Voltage on VDD supply relative to Vss: -1.0 to 3.6 V;(3)Voltage on VDD supply relative to Vss: -0.5 to 3.6 V;(4)Storage temperature: -55 to +150 °C;(5)Power dissipation: 3.3 W;(6)Short circuit current: 50 mA. If you want to know more information such as the electrical characteristics about the K4D263238E-GC33, please download the datasheet in www.seekic.com or www.chinaicmart.com.