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K1S3216BCD

Features: • Process Technology: CMOS• Organization: 2M x16 bit• Power Supply Voltage: 1.7~2.0V• Three State Outputs• Compatible with Low Power SRAM• Support 4 page read mode• Package Type: 48-FBGA-6.00x8.00Specifications Item Symbol Ratings Unit ...

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SeekIC No. : 004382615 Detail

K1S3216BCD: Features: • Process Technology: CMOS• Organization: 2M x16 bit• Power Supply Voltage: 1.7~2.0V• Three State Outputs• Compatible with Low Power SRAM• Support 4 pag...

K1S3216BCD Data Sheet

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Part Number:
K1S3216BCD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Process Technology: CMOS
• Organization: 2M x16 bit
• Power Supply Voltage: 1.7~2.0V
• Three State Outputs
• Compatible with Low Power SRAM
• Support 4 page read mode
• Package Type: 48-FBGA-6.00x8.00


Specifications

Item Symbol Ratings Unit
Voltage on any pin relative to Vss VIN, VOUT -0.2 to VCC+0.3V V
Voltage on Vcc supply relative to Vss VCC -0.2 to 2.5V V
Power Dissipation PD 1.0 W
Storage temperature TSTG -65 to 150 °C
Operating Temperature TA -40 to 85 °C

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reliability.




Description

The K1S3216BCD is fabricated by SAMSUNGs advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports deep power down mode for low standby current.




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