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K1S3216B1C

Features: · Process Technology: CMOS· Organization: 2M x16 bit· Power Supply Voltage: 1.7V~2.1V· Three State Outputs· Compatible with Low Power SRAM· Dual Chip selection support· Package Type: 48-FBGA-6.0x8.0Specifications Item Symbol Ratings Unit Voltage on any pin relative to Vss VIN...

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SeekIC No. : 004382614 Detail

K1S3216B1C: Features: · Process Technology: CMOS· Organization: 2M x16 bit· Power Supply Voltage: 1.7V~2.1V· Three State Outputs· Compatible with Low Power SRAM· Dual Chip selection support· Package Type: 48-FB...

K1S3216B1C Data Sheet

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Part Number:
K1S3216B1C
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

· Process Technology: CMOS
· Organization: 2M x16 bit
· Power Supply Voltage: 1.7V~2.1V
· Three State Outputs
· Compatible with Low Power SRAM
· Dual Chip selection support
· Package Type: 48-FBGA-6.0x8.0


Specifications

Item Symbol Ratings Unit
Voltage on any pin relative to Vss VIN, VOUT -0.2 to VCC+0.3V V
Voltage on Vcc supply relative to Vss VCC -0.2 to 2.5V V
Power Dissipation PD 1.0 W
Storage temperature TSTG -65 to 150 °C
Operating Temperature TA -40 to 85 °C

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to be used under recommended operating condition. Exposure to absolute maximum rating conditions longer than 1 second may affect reliability.




Description

The K1S3216B1C is fabricated by SAMSUNG¢s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supports dual chip selection for user interface.




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