SpecificationsMaximum Power Dissipation @ 252 220 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage 55 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 8.0 AmpsMaximum TemperaturesStorage Temperature - 65 to + 200Operating Junction Temperature+ 200DescriptionThe JTDB ...
JTDB75: SpecificationsMaximum Power Dissipation @ 252 220 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage 55 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 8.0 AmpsMaximum ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
The JTDB 75 is a high power COMMON BASE bipolar transistor. The JTDB 75 is designed for pulsed systems in the frequency band 960-1215 MHz. The JTDB 75 has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.