JTDB25 Selling Leads, Price trend, JTDB25 DataSheet download, circuit diagram from SeekIC.com

SpecificationsMaximum Power Dissipation @ 252 97 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage 55 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 5.0 AmpsMaximum TemperaturesStorage Temperature - 65 to + 200Operating Junction Temperature + 200DescriptionThe JTDB ...

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SeekIC No. : 004382448 Detail

JTDB25: SpecificationsMaximum Power Dissipation @ 252 97 WattsMaximum Voltage and CurrentBVces Collector to Base Voltage 55 VoltsBVebo Emitter to Base Voltage 3.5 VoltsIc Collector Current 5.0 AmpsMaximum T...

JTDB25 Data Sheet

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Part Number:: JTDB25
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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SpecificationsMaximum Power Dissipation @ 252 220 WattsMaximum Voltage and CurrentBVces Collector ...

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Description

Specifications

Maximum Power Dissipation @ 25²                            97 Watts
Maximum Voltage and Current
BVces Collector to Base Voltage                                     55 Volts
BVebo Emitter to Base Voltage                                     3.5 Volts
Ic Collector Current                                                      5.0 Amps
Maximum Temperatures
Storage Temperature                                          - 65 to + 200
Operating Junction Temperature                                    + 200

Description

The JTDB 25 is a high power COMMON BASE bipolar transistor. The JTDB 25 is designed for pulsed systems in the frequency band 960-1215 MHz. The JTDB 25 has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.

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JTDB25

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