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JANSR2N7486U3

Features: ·Single Event Effect (SEE) Hardened ·Ultra Low RDS(on) ·Low Total Gate Charge ·Proton Tolerant ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Surface Mount ·Ceramic Package ·Light WeightSpecifications Parameter Units ID @ VGS=-12V,TC=25 CCon...

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SeekIC No. : 004381976 Detail

JANSR2N7486U3: Features: ·Single Event Effect (SEE) Hardened ·Ultra Low RDS(on) ·Low Total Gate Charge ·Proton Tolerant ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Surface Mount ·Ceramic ...

JANSR2N7486U3 Data Sheet

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Part Number:
JANSR2N7486U3
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Description



Features:

·Single Event Effect (SEE) Hardened
·Ultra Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Ceramic Package
·Light Weight


Specifications
Parameter
Units
ID @ VGS=-12V,TC=25
 CContinuous Drain Curren
12
A
ID @ VGS=-2V,TC=100
 CContinuous Drain Curren
7.8
IDM
 Pulsed Drain Current
48
PD@ TC= 25
 CMax. Power Dissipatio
75
W
 Linear Derating Factor
0.6
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
60
mJ
IAR
 Avalanche Current
12
A
EAR
 Repetitive Avalanche Energy
7.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.4
V/nS
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300(for 5s)
 Weight
1.0 ( Typical )
g



Description

International Rectifier!s R5TM  technology JANSR2N7486U3 provides high performance power MOSFETs for space applications.  These devices JANSR2N7486U3 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).  The combination of low RDS(on)  and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.  These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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