Features: ·Single Event Effect (SEE) Hardened ·Ultra Low RDS(on) ·Low Total Gate Charge ·Proton Tolerant ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Surface Mount ·Ceramic Package ·Light WeightSpecifications Parameter Units ID @ VGS=-12V,TC=25 CCon...
JANSR2N7486U3: Features: ·Single Event Effect (SEE) Hardened ·Ultra Low RDS(on) ·Low Total Gate Charge ·Proton Tolerant ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Surface Mount ·Ceramic ...
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DescriptionThe JANS2N2904 is a NPN DARLINGTON POWER SILICON TRANSISTOR ,Qualified per MIL-PRF-1950...
DescriptionThe JANS2N3019 is a NPN DARLINGTON POWER SILICON TRANSISTOR ,Qualified per MIL-PRF-1950...
DescriptionThe JANS2N7236U is a POWER MOSFET SURFACE MOUNT(SMD-1).HEXFET® MOSFET technology is...
Parameter |
Units | ||
ID @ VGS=-12V,TC=25 |
CContinuous Drain Curren |
12 |
A |
ID @ VGS=-2V,TC=100 |
CContinuous Drain Curren |
7.8 | |
IDM |
Pulsed Drain Current |
48 | |
PD@ TC= 25 |
CMax. Power Dissipatio |
75 |
W |
Linear Derating Factor |
0.6 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
60 |
mJ |
IAR |
Avalanche Current |
12 |
A |
EAR |
Repetitive Avalanche Energy |
7.5 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
5.4 |
V/nS |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Lead Temperature |
300(for 5s) | ||
Weight |
1.0 ( Typical ) |
g |
International Rectifier!s R5TM technology JANSR2N7486U3 provides high performance power MOSFETs for space applications. These devices JANSR2N7486U3 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.