Features: Hermetically Sealed Low Forward Voltage Drop High Frequency OperationGuard Ring for Enhanced Ruggedness and Long Term Reliability Surface Mount LightweightSpecifications Parameters Limits Units Conditions IF(AV)Max. Average Forward CurrentSee Fig. 5 15 A 50% duty cycle @ T...
JANS1N6844U3: Features: Hermetically Sealed Low Forward Voltage Drop High Frequency OperationGuard Ring for Enhanced Ruggedness and Long Term Reliability Surface Mount LightweightSpecifications Parameters ...
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Specifications Parameters Limits Units Conditions IF(AV) Max. Average Forward...
DescriptionThe JANS2N2904 is a NPN DARLINGTON POWER SILICON TRANSISTOR ,Qualified per MIL-PRF-1950...
DescriptionThe JANS2N3019 is a NPN DARLINGTON POWER SILICON TRANSISTOR ,Qualified per MIL-PRF-1950...
Parameters | Limits | Units | Conditions |
IF(AV) Max. Average Forward Current See Fig. 5 |
15 | A | 50% duty cycle @ TC = 125°C, rectangular wavefor |
IFSMMax. Peak One Cycle Non - Repetitive Surge Current |
250 | A | @ tp = 8.3 ms half-sine |
The1N6844U3 Schottky rectifier JANS1N6844U3 has been expressldesigned to meet the rigorous requirements of Hireenvironments. The JANS1N6844U3 is packaged in the hermetic surfacmount SMD-0.5 ceramic package. The JANS1N6844U3'orward voltage drop and reverse leakage current aroptimized for the lowest power loss and the highescircuit efficiency for typical high frequency switchinpower supplies and resonent power converters. FuMIL-PRF-19500 quality conformance testing is availablon source controlled drawings to S, TX and TXV levels.