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JANSR2N7465U3

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 2...

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SeekIC No. : 004381971 Detail

JANSR2N7465U3: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic...

JANSR2N7465U3 Data Sheet

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Part Number:
JANSR2N7465U3
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current 5.3 A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current 3.4 A
IDM Pulsed Drain Current ➀ 21 A
PD @ TC = 25°C Max. Power Dissipation 75 W
  Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁ 150 mJ
IAR Avalanche Current ➀ 5.3 A
EAR Repetitive Avalanche Energy ➀ 7.5 mJ
dv/dt Peak Diode Recovery dv/dt ➂ 1.8 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range		 -55 to 150
  Lead Temperature 300 (for 5s)
  Weight 1.0(Typical ) g



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