Features: Features: Single Event Effect (SEE) Hardene Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC= 25°C Continuou...
JANSR2N7426U: Features: Features: Single Event Effect (SEE) Hardene Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic ...
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Features: Hermetically Sealed Low Forward Voltage Drop High Frequency OperationGuard Ring for Enh...
Specifications Parameters Limits Units Conditions IF(AV) Max. Average Forward...
DescriptionThe JANS2N2904 is a NPN DARLINGTON POWER SILICON TRANSISTOR ,Qualified per MIL-PRF-1950...
Parameter | Units | ||
ID @ VGS = -12V, T C= 25° C | Continuous Drain Current | -29 | A |
I D@ VGS = -12V, TC = 100° C | Continuous Drain Current | -18 | |
IDM |
Pulsed Drain Current | -116 | |
PD @ TC = 25° C | Max. Power Dissipatio | 300 | w |
Linear Derating Facto | 2.4 | W/o C | |
VGS |
Gate-to-Source Voltage | ±20 | v |
EAS |
Single Pulse Avalanche Energy | 500 | mJ |
IAR | Avalanche Current | -29 | A |
EAR | Repetitive Avalanche Energy | 30 | mJ |
dv/d | Peak Diode Recovery dv/dt | -20 | V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | oC |
Pckg. Mounting Surface Temp | 300 (for 5s) | ||
Weight | 3.3 (Typical | g |