Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light Weight· Surface MountSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C ...
JANSR2N7424U: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light Weigh...
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Features: Hermetically Sealed Low Forward Voltage Drop High Frequency OperationGuard Ring for Enh...
Specifications Parameters Limits Units Conditions IF(AV) Max. Average Forward...
DescriptionThe JANS2N2904 is a NPN DARLINGTON POWER SILICON TRANSISTOR ,Qualified per MIL-PRF-1950...
Parameter | Units | ||
ID @ VGS = -12V, TC = 25°C | Continuous Drain Current | -48 | A |
ID @ VGS = -12V, TC = 100°C | Continuous Drain Current | -30 | A |
IDM | Pulsed Drain Current ➀ | -192 | A |
PD @ TC = 25°C | Max. Power Dissipation | 300 | W |
Linear Derating Factor | 2.4 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy ➁ | 500 | mJ |
IAR | Avalanche Current ➀ | -48 | A |
EAR | Repetitive Avalanche Energy ➀ | 30 | mJ |
dv/dt | Peak Diode Recovery dv/dt ➂ | -4.4 | V/ns |
TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 150 | |
Lead Temperature | 300 (for 5s) | ||
Weight | 3.3 (Typical ) | g |