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JANSR2N7423

Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Package·Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25 Continuous Drain Current -14 A ID...

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SeekIC No. : 004381961 Detail

JANSR2N7423: Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Package·Light WeightSpecific...

JANSR2N7423 Data Sheet

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Part Number:
JANSR2N7423
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·Single Event Effect (SEE) Hardened
·Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic Package
·Light Weight


Specifications

Parameter   Units
ID @ VGS = -12V, TC = 25 Continuous Drain Current -14 A
ID @ VGS = -12V, TC = 100 Continuous Drain Current -9.0
IDM Pulsed Drain Current -56
PD @ TC = 25 Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current -14 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt -41 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150
Lead Temperature 300 (0.063 in./1.6mm from case for 10s)
Weight 9.3 (Typical) g



Description

International Rectifier's RAD-Hard HEXFET® technology JANSR2N7423 provides high performance power MOSFETs for space applications. This technology JANSR2N7423 has over a decade of proven performance and reliability in satellite applications. These devices JANSR2N7423 have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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