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JANSR2N7410

Features: • 3.5A, 100V, rDS(ON) = 0.600W• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias• Dose Ra...

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SeekIC No. : 004381958 Detail

JANSR2N7410: Features: • 3.5A, 100V, rDS(ON) = 0.600W• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity ...

JANSR2N7410 Data Sheet

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Part Number:
JANSR2N7410
Supply Ability:
5000

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Product Details

Description



Features:

• 3.5A, 100V, rDS(ON) = 0.600W
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 0.3nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
- Usable to 3E14 Neutrons/cm2


Specifications

Drain to Source Voltage VDS 100 V
Drain to Gate Voltage (RGS = 20W) VDGR 100 V
Continuous Drain Current
TC = 25oC		 ID 3.5 A
TC = 100oC. ID 2.5 A
Pulsed Drain Current IDM 10.5 A
Pulsed Drain Current VGS ±20 V
Maximum Power Dissipation
TC = 25oC		 PT 15 W
TC = 100oC PT 6 W
Linear Derating Factor   0.12 W/oC
Single Pulsed Avalanche Current, L = 100mH, (See Test Figure) IAS 10.5 A
Continuous Source Current (Body Diode) IS 3.5 A
Pulsed Source Current (Body Diode) ISM 10.5 A
Operating and Storage Temperature TJ, TSTG -55 to 150
Lead Temperature (During Soldering) TL 300
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)		   1.0 g



Description

The Discrete Products Operation of Intersil Corporation JANSR2N7410 has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, JANSR2N7410 is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.

The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened MOSFETs JANSR2N7410 includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.

This MOSFET JANSR2N7410 is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. The JANSR2N7410 is specially designed and processed to be radiation tolerant. The MOSFET JANSR2N7410 is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.




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