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JANSR2N7401

Features: • 6A, 250V, rDS(ON) = 0.600W• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias• Dose Rate...

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SeekIC No. : 004381950 Detail

JANSR2N7401: Features: • 6A, 250V, rDS(ON) = 0.600W• Total Dose- Meets Pre-RAD Specifications to 100K RAD (Si)• Single Event- Safe Operating Area Curve for Single Event Effects- SEE Immunity fo...

JANSR2N7401 Data Sheet

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Part Number:
JANSR2N7401
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 6A, 250V, rDS(ON) = 0.600W
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS
- Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 4.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2


Specifications

Drain to Source Voltage VDS 250 V
Drain to Gate Voltage (RGS = 20W) VDGR 250 V
Continuous Drain Current
TC = 25oC		 ID 6 A
TC = 100oC. ID 4 A
Pulsed Drain Current IDM 18 A
Pulsed Drain Current VGS ±20 V
Maximum Power Dissipation
TC = 25oC		 PT 50 W
TC = 100oC PT 20 W
Linear Derating Factor   0.40 W/oC
Single Pulsed Avalanche Current, L = 100mH, (See Test Figure) IAS 18 A
Continuous Source Current (Body Diode) IS 6 A
Pulsed Source Current (Body Diode) ISM 18 A
Operating and Storage Temperature TJ, TSTG -55 to 150
Lead Temperature (During Soldering) TL 300
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)		     g



Description

The Discrete Products JANSR2N7401 Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs JANSR2N7401 specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.

The dose rate and neutron tolerance necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened MOSFETs JANSR2N7401 includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.

This MOSFET JANSR2N7401 is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET JANSR2N7401 is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.




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