Features: ·Single Event Effect (SEE) Hardened ·Low RDS(on)·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Ceramic Package ·Light Weight ·Surface MountSpecifications Parameter Units ID @ VGS=-12V,TC=25 CContinuous Drain Curren ...
JANSR2N7394U: Features: ·Single Event Effect (SEE) Hardened ·Low RDS(on)·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Ceramic Package ·Light Weight ·Surface MountSpe...
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Features: Hermetically Sealed Low Forward Voltage Drop High Frequency OperationGuard Ring for Enh...
Specifications Parameters Limits Units Conditions IF(AV) Max. Average Forward...
DescriptionThe JANS2N2904 is a NPN DARLINGTON POWER SILICON TRANSISTOR ,Qualified per MIL-PRF-1950...
Parameter |
Units | ||
ID @ VGS=-12V,TC=25 |
CContinuous Drain Curren |
35 |
A |
ID@ VGS=-12V,TC=100 |
CContinuous Drain Curren |
30 | |
IDM |
Pulsed Drain Current |
283 | |
PD@ TC= 25 |
CMax. Power Dissipatio |
150 |
W |
Linear Derating Factor |
1.2 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
500 |
mJ |
IAR |
Avalanche Current |
35 |
A |
EAR |
Repetitive Avalanche Energy |
15 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
3.5 |
V/nS |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Lead Temperature |
300(5sec) | ||
Weight |
2.6 ( Typical ) |
g |
International Rectifier's RAD-HarTM HEXFET® technology JANSR2N7394U provides high performance power MOSFETs for space applications. This technology JANSR2N7394U has over a decade of proven performance and reliability in satellite applications. These devices JANSR2N7394U have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices JANSR2N7394U retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.