Features: Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) HardenedGamma Dot (Flash X-Ray) Hardened Neutron TolerantIdentical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requir...
JANSR2N7391: Features: Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) HardenedGamma Dot (Flash X-Ray) Hardened Neutron TolerantIdentical Pre- and ...
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Features: Hermetically Sealed Low Forward Voltage Drop High Frequency OperationGuard Ring for Enh...
Specifications Parameters Limits Units Conditions IF(AV) Max. Average Forward...
DescriptionThe JANS2N2904 is a NPN DARLINGTON POWER SILICON TRANSISTOR ,Qualified per MIL-PRF-1950...
Parameter |
IRHM7360SE |
Units | |
ID @ VGS = 12V, TC = 25°C |
Continuous Drain Current |
22 |
A |
ID @ VGS = 12V, TC = 100°C |
Continuous Drain Current |
14 |
A |
IDM |
Pulsed Drain Current |
88 |
A |
PD @ TC = 25°C |
Max. Power Dissipation |
250 |
W |
Linear Derating Factor |
2.0 |
W/K | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
500 |
mJ |
IAR |
Avalanche Current |
22 |
A |
EAR |
Repetitive Avalanche Energy |
25 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
4.0 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Lead Temperature |
300 (0.063 in. (1.6mm) from case for 10 sec.) |
||
Weight |
9.3 (typical) |
g |