Features: Single Event Effect (SEE) HardenedLow RDS(on)Low Total Gate ChargeProton TolerantSimple Drive RequirementsEase of ParallelingHermetically SealedCeramic PackageLight WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain Current -...
JANSR2N7389: Features: Single Event Effect (SEE) HardenedLow RDS(on)Low Total Gate ChargeProton TolerantSimple Drive RequirementsEase of ParallelingHermetically SealedCeramic PackageLight WeightSpecifications ...
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Features: Hermetically Sealed Low Forward Voltage Drop High Frequency OperationGuard Ring for Enh...
Specifications Parameters Limits Units Conditions IF(AV) Max. Average Forward...
DescriptionThe JANS2N2904 is a NPN DARLINGTON POWER SILICON TRANSISTOR ,Qualified per MIL-PRF-1950...
Parameter |
Units | ||
ID @ VGS = -12V, TC = 25°C |
Continuous Drain Current |
-22 |
A |
ID @ VGS = -12V, TC = 100°C |
Continuous Drain Current |
-14 | |
IDM |
Pulsed Drain Current |
-88 | |
PD @ TC = 25°C |
Max. Power Dissipation |
150 |
W |
Linear Derating Factor |
1.2 |
W/°C | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
500 |
mJ |
IAR |
Avalanche Current |
-22 |
A |
EAR |
Repetitive Avalanche Energy |
15 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
-23 |
V/ns |
TJ |
Operating Junction |
-55 to 150 |
|
Lead Temperature |
300 ( 0.063 in. (1.6mm) from case for 10s) | ||
Weight |
9.3 (typical) |
9 |