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JANSR2N7380

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain C...

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SeekIC No. : 004381937 Detail

JANSR2N7380: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Light Weigh...

JANSR2N7380 Data Sheet

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Part Number:
JANSR2N7380
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Eyelets
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current 14.4 A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current 9.1 A
IDM Pulsed Drain Current 58 A
PD @ TC = 25°C Max. Power Dissipation 75 W
  Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 150 mJ
IAR Avalanche Current   A
EAR Repetitive Avalanche Energy   mJ
dv/dt Peak Diode Recovery dv/dt 6.0 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range		 -55 to 150 oC
  Lead Temperature 300 ( 0.063 in. (1.6mm) from case for 10s) oC
  Weight 7.0 (typical) g



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