JANSR2N7294

Features:

•23A, 200V, rDS(ON)= 0.115Ω
•Total Dose
-Meets Pre-RAD Specifications to 100K RAD (Si)
•Dose Rate
-Typically Survives 3E9 RAD (Si)/s at 80% BV_DSS
-Typically Survives 2E12 if Current Limited to I_DM
•Photo Current
-12nA Per-RAD(Si)/s Typically
•Neutron
-Maintain Pre-RAD Specificationsfor 1E13 Neutrons/cm²
-Usable to 1E14 Neutrons/cm²


Pinout




Specifications

                                                                                                                            JANSR2N7294    UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS                  200                     V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . .VDGR                200                     V
Continuous Drain Current
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID                      23                       A
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID                      15                       A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM                   69                       A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS                  ±20                      V
Maximum Power Dissipation
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT                    125                      W
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PT                     50                       W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.00                W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . IAS                    69                        A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . .IS                      23                        A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . .ISM                   69                        A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG      -55 to 150                oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . .TL                   300                       oC
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .                        9.3                         g


Description

  The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs JANSR2N7294 of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness JANSR2N7294 is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.