JANSR2N7292

Features:

•25A, 100V, r_DS(ON) = 0.070Ω
•Total D_ose
-Meets Pre-RAD Specifications to 100K RAD (Si)
•Dose Rate
-Typically Survives 3E9 RAD (Si)/s at 80% BV_DSS
-Typically Survives 2E12 if Current Limited to IDM
•Photo Current
-7.0nA Per-RAD(Si)/s Typically
•Neutron
-Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2
-Usable to 3E14 Neutrons/cm²


Pinout




Specifications

                                                                                         JANSR2N7292   UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . V_DS          100              V
Drain to Gate Voltage (R_GS = 20kW) . . . . . . . . . . . .V_DGR        100              V
Continuous Drain Current
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D            25                A
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D            20                A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . .  I_DM          75                 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . .V_GS        ±20                 V
Maximum Power Dissipation
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_T           125                W
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_T            50                 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.00            W/oC
Single Pulsed Avalanche Current,

L = 100mH, (See Test Figure). . . . . . . . . . . . . . . . . I_AS            75                 A
Continuous Source Current (Body Diode) . . . . . . . .I_S             25                 A
Pulsed Source Current (Body Diode) . . . . . . . . . . .  I_SM          75                 A
Operating and Storage Temperature . . . . . . . T_JC, T_STG   -55 to 150       oC
Lead Temperature (During Soldering) . . . . . . . .   TL                300            oC
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  9.3             g

Description

  The Intersil Corporation JANSR2N7292 has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan-nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hard-ness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

  This MOSFET JANSR2N7292 is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) struc-ture. The JANSR2N7292 is specially designed and processed to exhibit mini-mal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to dose rate (GAMMA DOT) exposure. Also available at other radiation and screening levels. See us on the web, Intersil's home page: Contact your local Intersil Sales Office for additionalinformation.