JANSR2N7278

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DS       250       V
Drain to Gate Voltage (R_GS = 20k) . . . . . . . . . . . . . . . . . . . .V_DGR       250       V
Continuous Drain Current
    T_C = 25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D        4          A
    T_C = 100^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . I_D        2          A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM      12         A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS      ±20       V
Maximum Power Dissipation
    T_C = 25^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P_T       25        W
    T_C = 100^oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. P_T       10        W
    Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .    0.20    W/^oC
Single Pulsed Avalanche Current, L = 100mH, (See Test Figure). .I_AS     12         A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . .  I_S        4        A
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . I_SM        12        A
Operating and Storage Temperature . . . . . . . . . . . . . . T_J, T_STG   -55 to 150     ^oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . T_L     300    ^oC
    (Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.0       g

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

The Intersil Corporation JANSR2N7278  has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hardness
(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting.

This MOSFET JANSR2N7278 is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. The JANSR2N7278 is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to dose rate (GAMMA DOT) exposure.

Also available at other radiation and screening levels. See us on the web, Intersil's home page: http://www.semi.harris.com. Contact your local Intersil Sales Office for additional information.