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JANSR2N7261

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25V Continuous Drain Current 8.0...

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SeekIC No. : 004381926 Detail

JANSR2N7261: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light Weigh...

JANSR2N7261 Data Sheet

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Part Number:
JANSR2N7261
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25V Continuous Drain Current 8.0 A
ID @ VGS = 12V, TC = 100 Continuous Drain Current 5.0
IDM Pulsed Drain Current 32
PD @ TC = 25 Max. Power Dissipation 25 W
  Linear Derating Factor 0.20 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 130 mJ
IAR Avalanche Current 8.0 A
EAR Repetitive Avalanche Energy 2.5 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
TJ
TSTG		 Operating JunctionStorage Temperature Range -55 to 150
  Lead Temperature 300 (0.063 in. (1.6mm) from case for 10 sec.)
  Weight 0.98 (Typical) g



Description

International Rectifier's RADHard HEXFET® technology JANSR2N7261 provides high performance power MOSFETs for space applications. This technology JANSR2N7261 has over a decade of proven performance and reliability in satellite applications. These devices JANSR2N7261 have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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