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JANSH2N7270

Features: ·Radiation Hardened up to 1 x 106 Rads (Si)·Single Event Burnout (SEB) Hardened·Single Event Gate Rupture (SEGR) Hardened·Gamma Dot (Flash X-Ray) Hardened·Neutron Tolerant·Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Rating·Dynamic dv/dt Rating·Simple Drive Req...

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SeekIC No. : 004381924 Detail

JANSH2N7270: Features: ·Radiation Hardened up to 1 x 106 Rads (Si)·Single Event Burnout (SEB) Hardened·Single Event Gate Rupture (SEGR) Hardened·Gamma Dot (Flash X-Ray) Hardened·Neutron Tolerant·Identical Pre- a...

JANSH2N7270 Data Sheet

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Part Number:
JANSH2N7270
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

·Radiation Hardened up to 1 x 106 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Electrically Isolated
·Ceramic Eyelets


Specifications
Parameter
IRHM7450, IRHM8450
Units
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
11
A
ID @ VGS = 12V, TC = 100°C
Continuous Drain Current
7.0
IDM
Pulsed Drain Current ‚
44
PD @ TC = 25°C
Max. Power Dissipation
150
W
Linear Derating Factor
1.2
W/°C
VGS
Gate-to-Source Voltage

±20
V
EAS
Single Pulse Avalanche Energy ƒ
500
mJ
IAR
Avalanche Current ‚
11
A
EAR
Repetitive Avalanche Energy‚
15
mJ
dv/dt
Peak Diode Recovery dv/dt „
3.5
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10s)
Weight
9.3 (typical)
g



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