JANS2N7236U

DescriptionThe JANS2N7236U is a POWER MOSFET SURFACE MOUNT(SMD-1).HEXFET® MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transis...

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SeekIC No. : 004381921 Detail

JANS2N7236U: DescriptionThe JANS2N7236U is a POWER MOSFET SURFACE MOUNT(SMD-1).HEXFET® MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geome...

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Part Number:
JANS2N7236U
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/12

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Product Details

Description



Description

The JANS2N7236U is a POWER MOSFET SURFACE MOUNT(SMD-1).HEXFET® MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors.  The efficient geometry design achieves very low on-state resistance combined with high transconductance.  HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching,ease of paralleling and electrical parameter temperature stability.  They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers,audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required.  The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink.  This improves thermal efficiency and reduces drain capacitance.

Feature of the JANS2N7236U is:(1)Simple Drive Requirements; (2)Ease of Paralleling; (3)Hermetically Sealed; (4)Electrically Isolated; (5)Surface Mount; (6)Dynamic dv/dt Rating; (7)Light-weight.

The absolute maximum ratings of the JANS2N7236U can be summarized as:(1) Continuous Drain Current :-18A; (2) Continuous Drain Current :-11A; (3)Pulsed Drain Current : -72A; (4) Max. Power Dissipation :125 W; (5)Linear Derating Factor: 1.0 W/°C; (6)Gate-to-Source Voltage: ±20 V; (7)Single Pulse Avalanche Energy : 500 mJ; (8)Avalanche Current : -18 A; (9)Repetitive Avalanche Energy: 12.5 mJ; (10) Peak Diode Recovery dv/dt : -5.0 V/ns; (11)Operating Junction Storage Temperature Range: -55 to 150; (12)Package Mounting Surface Temperature :300 (for 5 S); (13)Weight: 2.6(typical) g.If you want to know more information such as the electrical characteristics, please download the datasheet in www.seekic.com or www.chinaicmart.com.




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