DescriptionThe JANS2N7236U is a POWER MOSFET SURFACE MOUNT(SMD-1).HEXFET® MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transis...
JANS2N7236U: DescriptionThe JANS2N7236U is a POWER MOSFET SURFACE MOUNT(SMD-1).HEXFET® MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geome...
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Features: Hermetically Sealed Low Forward Voltage Drop High Frequency OperationGuard Ring for Enh...
Specifications Parameters Limits Units Conditions IF(AV) Max. Average Forward...
DescriptionThe JANS2N2904 is a NPN DARLINGTON POWER SILICON TRANSISTOR ,Qualified per MIL-PRF-1950...
The JANS2N7236U is a POWER MOSFET SURFACE MOUNT(SMD-1).HEXFET® MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching,ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers,audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
Feature of the JANS2N7236U is:(1)Simple Drive Requirements; (2)Ease of Paralleling; (3)Hermetically Sealed; (4)Electrically Isolated; (5)Surface Mount; (6)Dynamic dv/dt Rating; (7)Light-weight.
The absolute maximum ratings of the JANS2N7236U can be summarized as:(1) Continuous Drain Current :-18A; (2) Continuous Drain Current :-11A; (3)Pulsed Drain Current : -72A; (4) Max. Power Dissipation :125 W; (5)Linear Derating Factor: 1.0 W/°C; (6)Gate-to-Source Voltage: ±20 V; (7)Single Pulse Avalanche Energy : 500 mJ; (8)Avalanche Current : -18 A; (9)Repetitive Avalanche Energy: 12.5 mJ; (10) Peak Diode Recovery dv/dt : -5.0 V/ns; (11)Operating Junction Storage Temperature Range: -55 to 150; (12)Package Mounting Surface Temperature :300 (for 5 S); (13)Weight: 2.6(typical) g.If you want to know more information such as the electrical characteristics, please download the datasheet in www.seekic.com or www.chinaicmart.com.