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JAN4N47

Features: • High Reliability• Base lead provided for conventional transistor biasing• Rugged package• High gain, high voltage transistor• +1kV electrical isolationApplication• Eliminate ground loops• Level shifting• Line receiver• Switching pow...

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SeekIC No. : 004381911 Detail

JAN4N47: Features: • High Reliability• Base lead provided for conventional transistor biasing• Rugged package• High gain, high voltage transistor• +1kV electrical isolationAppli...

JAN4N47 Data Sheet

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Part Number:
JAN4N47
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• High Reliability
• Base lead provided for conventional transistor biasing
• Rugged package
• High gain, high voltage transistor
• +1kV electrical isolation


Application

• Eliminate ground loops
• Level shifting
• Line receiver
• Switching power supplies
• Motor control


Specifications

Input to Output Voltage......................................................1kV
Emitter-Collector Voltage......................................................7V
Collector-Emitter Voltage (Value applies to emitter-base open-
circuited & the input-diode equal to zero) ..........................40V
Collector-Base Voltage .......................................................45V
Reverse Input Voltage .........................................................2V
Input Diode Continuous Forward Current at (or below) 65°C
Free-Air Temperature (see note 1) .................................40mA
Peak Forward Input Current (Value applies for tw < 1µs, PRR
< 300 pps) ...........................................................................1A
Continuous Collector Current ..........................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C
Free-Air Temperature (see Note 2) ..............................300mW
Storage Temperature................................. -65°C to +125°C
Operating Free-Air Temperature Range ..... -55°C to +125°C
Lead Solder Temperature (1/16" (1.6mm) from case for 10
seconds) ...................................................................... 240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.


Description

Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor JAN4N47  packaged in a hermetically sealed TO-5 metal can. The 4N47, 4N48 and 4N49's can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANTX, JANTXV and JANS quality levels.




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