Features: • Overall current gain...1.5 typical (4N24)• Base lead provided for conventional transistor biasing• Rugged package• High gain, high voltage transistor• +1kV electrical isolationApplication• Eliminate ground loops• Level shifting• Line rece...
JAN4N22: Features: • Overall current gain...1.5 typical (4N24)• Base lead provided for conventional transistor biasing• Rugged package• High gain, high voltage transistor• +1kV ...
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Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor JAN4N22 packaged in a hermetically sealed metal case. The 4N22, 4N23 and 4N24's can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANS, JANTX and JANTXV quality levels.