Specifications Parameters / Test Conditions Symbol Value Units Gate-Source Voltage VGS -40 V Drain-Source Voltage VDS 40 V Drain-Gate Voltage VDG 40 V Gate Current IG 10 mAdc Power Dissipation(1) TA = +25 PT 0.36 W Operating Junction TJ -...
JAN2N4092: Specifications Parameters / Test Conditions Symbol Value Units Gate-Source Voltage VGS -40 V Drain-Source Voltage VDS 40 V Drain-Gate Voltage VDG 40 V Gate Cu...
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DescriptionThe JAN2N2222A is a kind of NPN small signal bipolar silicon transistor. The JAN2N2222A...
Parameters / Test Conditions | Symbol | Value | Units | |
Gate-Source Voltage | VGS | -40 | V | |
Drain-Source Voltage | VDS | 40 | V | |
Drain-Gate Voltage | VDG | 40 | V | |
Gate Current | IG | 10 | mAdc | |
Power Dissipation(1) | TA = +25 |
PT | 0.36 | W |
Operating Junction | TJ | -65 to +175 | °C | |
Operating Storage Temperature Range | Tstg | -65 to +200 | °C |