DescriptionThe JAN2N2222 belongs to the JAN2N2222A series.The JAN2N2222is a kind of NPN small signal bipolar silicon transistor.The JAN2N2222is available in the TO-18 package. There are some features as follows. (1) meets MIL 19500/255; (2) high speed,medium current bipolar transistor. The follow...
JAN2N2222: DescriptionThe JAN2N2222 belongs to the JAN2N2222A series.The JAN2N2222is a kind of NPN small signal bipolar silicon transistor.The JAN2N2222is available in the TO-18 package. There are some feature...
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DescriptionThe JAN2N2222A is a kind of NPN small signal bipolar silicon transistor. The JAN2N2222A...
The JAN2N2222 belongs to the JAN2N2222A series. The JAN2N2222 is a kind of NPN small signal bipolar silicon transistor. The JAN2N2222 is available in the TO-18 package. There are some features as follows. (1) meets MIL 19500/255; (2) high speed,medium current bipolar transistor.
The following is some information concerning JAN2N2222 maximum ratings. (1): collector to emitter voltage (VCEO) is 50 Vdc; (2): collector to base voltage (VCBO) is 75 Vdc; (3): emitter to base voltage (VEBO) is 6 Vdc; (4): collector current (IC) is 800 mAdc; (5): total device dissipation (PD) is 500 mW at TA is 25 and is 1.8 Watts at TC is 25 ; (6): operating and storage junction temperature range from -65 to 200 . Then is about its electrical characters. (1): the minimum collector-emitter breakdown voltage (VBRCEO) is 50 Vdc when IC is 10 mAdc and IB is 0; (2): the maximum collector-base cutoff curent (ICBO) is 10 nAdc when VCB is 60 Vdc and is 10 Adc when VCB is 60 Vdc,IE is 0 and TA is 25 ; (3): the maximum emitter-base cutoff current (IEBO) is 10 nAdc at VEB is 4 Vdc; (4): the maximum collector-emitter cutoff current (ICES) is 50 nAdc at VCE is 50 Vdc and VBE is 0 V; (5): the maximum collector-emitter saturation voltage (VCEsat) is 0.3 Vdc when IC is 150 mAdc and IB is 15 mAdc; (6): the typical base-emitter saturation voltage (VBEsat) is 0.6 Vdc and the maximum is 1.2 Vdc at the condition of IC is 150 mAdc and IB is 15 mAdc.
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