JAN2N2907A

DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Transistor Polarity : PNP
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-18
Collector- Emitter Voltage VCEO Max : - 60 VDC
Emitter- Base Voltage VEBO : - 5 VDC
Maximum DC Collector Current : - 600 mA


Description

The JAN2N2907A is a kind of PNP small signal silicon transistor. The JAN2N2907A is available in the TO-206A package.

The following is some information concerning JAN2N2907A  maximum ratings. (1): collector to emitter voltage (VCEO) is 60 Vdc; (2): collector to base voltage (VCBO) is 60 Vdc; (3): emitter to base voltage (VEBO) is 5.0 Vdc; (4): collector current (IC) is 600 mAdc; (5): total power dissipation (PT) is 0.4 W at TA is 25 and is 1.8 W at TC is 25 ; (6): operating and storage junction temperature range from -65 to 200 . Then is about its off characters. (1): the minimum collector-emitter breakdown voltage (VBRCEO) is 60 Vdc when IC is 10 mAdc; (2): the maximum collector-base cutoff curent (ICBO) is 10 Adc when VCE is 50 Vdc and is 10 Adc when VCE is 60 Vdc; (3): the maximum emitter-base cutoff current (IEBO) is 50 Adc at VEB is 4.0 Vdc and is 10 Adc at VEB is 5.0 Vdc.

There is no much information,if you want more details about JAN2N2907A  electrical charaters,please download the datasheet at www.seekic.com.