Specifications Parameters/TestConditions Symbol Value Units Gate-Source Voltage VGSS 30 V Power Dissipation (1) TA = +25 PD 300 mW Operating Junction & Storage Temperature Range Top,Tstg -65 to +200 (1) Derate linearly 1.71 mW/ for TA > +25.
JAN2N2608: Specifications Parameters/TestConditions Symbol Value Units Gate-Source Voltage VGSS 30 V Power Dissipation (1) TA = +25 PD 300 mW Operating Junction & Storage Temperature...
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DescriptionThe JAN2N2222A is a kind of NPN small signal bipolar silicon transistor. The JAN2N2222A...