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IXTU5N50P

MOSFET 5 Amps 500V 1.4 Ohms Rds

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SeekIC No. : 00154342 Detail

IXTU5N50P: MOSFET 5 Amps 500V 1.4 Ohms Rds

IXTU5N50P Data Sheet

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Part Number:
IXTU5N50P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 4.8 A
Resistance Drain-Source RDS (on) : 1.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-251 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 4.8 A
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.4 Ohms
Package / Case : TO-251


Parameters:

Technical/Catalog InformationIXTU5N50P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C4.8A
Rds On (Max) @ Id, Vgs1.4 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 620pF @ 25V
Power - Max89W
PackagingTube
Gate Charge (Qg) @ Vgs12.6nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTU5N50P
IXTU5N50P



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