Position: Home  > All Categories> Integrated Circuits (ICs) > IXTU01N100

IXTU01N100

MOSFET 0.1 Amps 1000V 80 Rds

product image

IXTU01N100 Picture
See larger image
SeekIC No. : 00151026 Detail

IXTU01N100: MOSFET 0.1 Amps 1000V 80 Rds

IXTU01N100 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXTU01N100
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.1 A
Resistance Drain-Source RDS (on) : 80 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-251AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 0.1 A
Drain-Source Breakdown Voltage : 1000 V
Package / Case : TO-251AA
Resistance Drain-Source RDS (on) : 80 Ohms


Features:

·International standard packages JEDEC TO-251 AA, TO-252 AA
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Fast switching times


Application

·Level shifting
·Triggers
·Solid state relays
·Current regulators


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M		 1000
1000		 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM		 TC = 25°C
TC = 25°C, pulse width limited by TJM		 100
400		 A
A
PD TC = 25°C 25 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s 300 °C
Weight   0.8 g



Parameters:

Technical/Catalog InformationIXTU01N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C100mA
Rds On (Max) @ Id, Vgs80 Ohm @ 100mA, 10V
Input Capacitance (Ciss) @ Vds 54pF @ 25V
Power - Max25W
PackagingTube
Gate Charge (Qg) @ Vgs6.9nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTU01N100
IXTU01N100



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
LED Products
LM24P20
KCG057QV1DB-G770
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Transformers
TM-09210
BV222-1-00992
Isolators
HCPL062N
HCPL316J
Resistors
A101G
3006P-1-205LF
View more