MOSFET 0.1 Amps 1000V 80 Rds
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1000 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.1 A | ||
Resistance Drain-Source RDS (on) : | 80 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-251AA | Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M |
1000 1000 |
V V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
ID25 IDM |
TC = 25°C TC = 25°C, pulse width limited by TJM |
100 400 |
A A |
PD | TC = 25°C | 25 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
TL | 1.6 mm (0.063 in.) from case for 10 s | 300 | °C |
Weight | 0.8 | g |
Technical/Catalog Information | IXTU01N100 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25° C | 100mA |
Rds On (Max) @ Id, Vgs | 80 Ohm @ 100mA, 10V |
Input Capacitance (Ciss) @ Vds | 54pF @ 25V |
Power - Max | 25W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 6.9nC @ 10V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTU01N100 IXTU01N100 |