MOSFET 0.2 Amps 500V 30 Rds
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.2 A | ||
Resistance Drain-Source RDS (on) : | 30000 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-251AA-3 | Packaging : | Tube |
Symbol |
Conditions |
Ratings |
VDSX VDGX |
TJ = 25 to 150 TJ = 25 to 150 |
500 V 500 V |
VGS VGSM |
Continuous Transient |
± 20 V ± 30 V |
IDSS IDM |
TC = 25; TJ = 25 to 150 TC = 25, pulse width limited by TJ |
200 mA 800 mA |
PD |
TC = 25 T = 25 |
25 W 1.1 W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 | |
TL TISOL |
1.6 mm (0.063 in.) from case for 10 s Plastic case for 10 s (IXTU) |
300 300 |
Md |
Mounting torque TO-220 |
1.3 / 10 Nm/lb. |
Weight |
TO-220 TO-251 TO-252 |
4 g 0.8 g 0.8 g |
Technical/Catalog Information | IXTU02N50D |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 200mA |
Rds On (Max) @ Id, Vgs | 30 Ohm @ 50mA, 0V |
Input Capacitance (Ciss) @ Vds | 120pF @ 25V |
Power - Max | 1.1W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | - |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Depletion Mode |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTU02N50D IXTU02N50D |