IXTU08N100P

MOSFET 0.8 Amps 1000V 20 Rds

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IXTU08N100P Picture
SeekIC No. : 00153919 Detail

IXTU08N100P: MOSFET 0.8 Amps 1000V 20 Rds

floor Price/Ceiling Price

Part Number:
IXTU08N100P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

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evaluate  (4.8 stars)

Upload time: 2024/12/21

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Product Details

Quick Details

Packaging : Tube    

Description

Transistor Polarity :
Drain-Source Breakdown Voltage :
Gate-Source Breakdown Voltage :
Continuous Drain Current :
Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Tube


Parameters:

Technical/Catalog InformationIXTU08N100P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs-
Input Capacitance (Ciss) @ Vds -
Power - Max-
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseIPak, TO-251 (2 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTU08N100P
IXTU08N100P



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