IXTU06N120P

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Input Capacitance (Ciss) @ Vds: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 600mA
Gate Charge (Qg) @ Vgs: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Power - Max: -
Packaging: Tube
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Manufacturer: IXYS
Supplier Device Package: TO-251


Parameters:

Technical/Catalog Information	IXTU06N120P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C	600mA
Rds On (Max) @ Id, Vgs	-
Input Capacitance (Ciss) @ Vds	-
Power - Max	-
Packaging	Tube
Gate Charge (Qg) @ Vgs	-
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTU06N120P IXTU06N120P